Detail publikace

Influence of localized structure defects on the pn junction properties

ŠKARVADA, P. TOMÁNEK, P. ŠICNER, J.

Originální název

Influence of localized structure defects on the pn junction properties

Typ

konferenční sborník (ne článek)

Jazyk

angličtina

Originální abstrakt

Local defects in the solar cell structures evidently affect electrical and photoelectrical properties of the cells. These local defects can be microfractures, precipitates and other material structure inhomogeneities. Localization of the defects in the structure and assigning particular defects with photoelectrical parameter deterioration is keypoint for solar cell lifetime and efficiency improvement. Although the breakdown can be evident in current-voltage plot, the localization on the sample has to been done by microscopic investigations and defects light emission measurement under electrical bias conditions. The defects structures are microscopically investigated in this paper. Moreover the experimental results obtained from samples where the defects were removed by focused ion beam are presented. Sample electrical and photoelectrical properties before and after milling are discussed.

Klíčová slova

Solar cell, defect, silicon, ion beam milling

Autoři

ŠKARVADA, P.; TOMÁNEK, P.; ŠICNER, J.

Vydáno

1. 7. 2013

Nakladatel

VUTIUM

Místo

Brno

ISBN

978-80-214-4739-4

Strany od

203

Strany do

203

Strany počet

1

BibTex

@proceedings{BUT101623,
  editor="Pavel {Škarvada} and Pavel {Tománek} and Jiří {Šicner}",
  title="Influence of localized structure defects on the pn junction properties",
  year="2013",
  pages="203--203",
  publisher="VUTIUM",
  address="Brno",
  isbn="978-80-214-4739-4"
}