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METIN, B. HERENCSÁR, N. CICEKOGLU, O.
Originální název
A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
This paper presents a simple electronically tunable voltage-mode first-order all-pass filter realization with MOSFET-C technique. In comparison to the classical MOSFET-C filter circuits that employ active elements including large number of transistors the proposed circuit is only composed of a single two n-channel MOSFET-based inverting voltage buffer, three passive components, and one NMOS-based voltage-controlled resistor, which is with advantage used to electronically control the pole frequency of the filter in range 103 kHz to 18.3 MHz. The proposed filter is also very suitable for low-voltage operation, since between its supply rails it uses only two MOSFETs. In the paper the effect of load is investigated. In addition, in order to suppress the effect of non-zero output resistance of the inverting voltage buffer, two compensation techniques are also introduced. The theoretical results are verified by SPICE simulations using PTM 90 nm level-7 CMOS process BSIM3v3 parameters, where +/- 0.45 V supply voltages are used. Moreover, the behavior of the proposed filter was also experimentally measured using readily available array transistors CD4007UB by Texas Instruments.
Klíčová slova
Analog signal processing, all-pass filter, output resistance compensation techniques, first-order filter, inverting voltage buffer, loading effect, MOSFET-C filter, MOS resistive cell, tunable filter, voltage-mode.
Autoři
METIN, B.; HERENCSÁR, N.; CICEKOGLU, O.
Rok RIV
2013
Vydáno
2. 12. 2013
ISSN
1210-2512
Periodikum
Radioengineering
Ročník
22
Číslo
4
Stát
Česká republika
Strany od
985
Strany do
994
Strany počet
10
BibTex
@article{BUT102719, author="Bilgin {Metin} and Norbert {Herencsár} and Oguzhan {Cicekoglu}", title="A Low-Voltage Electronically Tunable MOSFET-C Voltage-Mode First-Order All-Pass Filter Design", journal="Radioengineering", year="2013", volume="22", number="4", pages="985--994", issn="1210-2512" }