Detail publikace

AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate

DALLAEVA, D. TALU, S. STACH, S. ŠKARVADA, P. TOMÁNEK, P. TALU, M. GRMELA, L.

Originální název

AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis.

Klíčová slova

AlN epilayer, saphire, roughness, AFM, fractal analysis, measurement

Autoři

DALLAEVA, D.; TALU, S.; STACH, S.; ŠKARVADA, P.; TOMÁNEK, P.; TALU, M.; GRMELA, L.

Rok RIV

2013

Vydáno

25. 11. 2013

Nakladatel

Comenius University

Místo

Bratislava

ISBN

978-80-223-3501-0

Kniha

Proceedings of 8th Solid State Surfaces and Interfaces

Strany od

33

Strany do

34

Strany počet

2

BibTex

@inproceedings{BUT103194,
  author="Dinara {Sobola} and Stefan {Talu} and Sebastian {Stach} and Pavel {Škarvada} and Pavel {Tománek} and Mihai {Talu} and Lubomír {Grmela}",
  title="AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate",
  booktitle="Proceedings of 8th Solid State Surfaces and Interfaces",
  year="2013",
  pages="33--34",
  publisher="Comenius University",
  address="Bratislava",
  isbn="978-80-223-3501-0"
}