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ŠIK, O. GRMELA, L.
Originální název
Photoconductivity of CdTe Semiconductor Radiation Detectors
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
This paper presents the results of experimental studies of transport and noise characteristics of CdTe deterctors. The current – voltage (I-V) characteristics and noise spectral densities were measured at the room temperature in dark and illumination through the contact area. We found that in this sample are good ohmic contacts and then measured noise corresponds volume noise sources only. The dominant noise source is 1/f type. One sample met the criteria to assumed bz the Hooge model. The Hooge constant for this sample was found: 5.5x10^-2. This value is higher than 2x10^-3 proposed by the Hooge theory due to the contact noise sources. Nevertheless, this value is very close to the theoretical.
Klíčová slova
CdTe, noise, reliability
Autoři
ŠIK, O.; GRMELA, L.
Rok RIV
2013
Vydáno
16. 11. 2013
Nakladatel
International Scientific Academy of Engineering & Technology
Místo
India
ISSN
2320-401X
Periodikum
International Journal of Computer Science and Electronics Engineering
Ročník
1
Číslo
5
Stát
Indická republika
Strany od
31
Strany do
34
Strany počet
4
BibTex
@article{BUT103625, author="Ondřej {Šik} and Lubomír {Grmela}", title="Photoconductivity of CdTe Semiconductor Radiation Detectors", journal="International Journal of Computer Science and Electronics Engineering", year="2013", volume="1", number="5", pages="31--34", issn="2320-401X" }