Detail publikace

Interpreting area of pinched memristor hysteresis loop

BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V.

Originální název

Interpreting area of pinched memristor hysteresis loop

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity content, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area below the v-i characteristic of the memristor: one is related to the power conditions and the other to the instantaneous state of the memristor memory. It is demonstrated for a memristor driven by the sinusoidal current that the power part of the content depends on the fundamental harmonic of the voltage, whereas the memory part of the content is given only by the higher harmonics of the voltage, and only by the even harmonics in the case of entirely closed loops. The analogous conclusions also hold for the voltage-controlled memristor.

Klíčová slova

Memristor, pinched hysteresis loop, content

Autoři

BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.

Rok RIV

2014

Vydáno

17. 1. 2014

Nakladatel

IET

Místo

Londýn

ISSN

0013-5194

Periodikum

Electronics Letters

Ročník

50

Číslo

2

Stát

Spojené království Velké Británie a Severního Irska

Strany od

74

Strany do

75

Strany počet

2

URL

http://digital-library.theiet.org/content/journals/10.1049/el.2013.3108

BibTex

@article{BUT104975,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková}",
  title="Interpreting area of pinched memristor hysteresis loop",
  journal="Electronics Letters",
  year="2014",
  volume="50",
  number="2",
  pages="74--75",
  doi="10.1049/el.2013.3108",
  issn="0013-5194",
  url="http://digital-library.theiet.org/content/journals/10.1049/el.2013.3108"
}