Detail publikace

Voltage-Mode All-Pass Filter Design Using Simple CMOS Transconductor: Non-Ideal Case Study

HERENCSÁR, N. MINAEI, S. KOTON, J. VRBA, K.

Originální název

Voltage-Mode All-Pass Filter Design Using Simple CMOS Transconductor: Non-Ideal Case Study

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In this paper, basic transconductor composed of only p-channel and n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) and its utilization for low-voltage first-order voltage-mode (VM) all-pass filter (APF) design is studied. For initial filter design a general structure employing single transconductor and two admittances was proposed. By choosing passive components and considering real behavior of MOSFETs, i.e. parasitic capacitances and output resistances, six specific cases for VM APF design are discussed. SPICE simulations using IBM 0.13 mm level-7 SIGE013 CMOS process BSIM3v3.1 parameters and with +-0.75 V supply voltages are included to support the theoretical results. The selected solution was designed at pole frequency of 219 MHz and consumes 480 uW power.

Klíčová slova

Analog signal processing, all-pass filter, parasitic capacitances, transconductor, voltage-mode circuit

Autoři

HERENCSÁR, N.; MINAEI, S.; KOTON, J.; VRBA, K.

Rok RIV

2014

Vydáno

1. 7. 2014

Místo

Berlin, Germany

ISBN

978-1-4799-8497-8

Kniha

Proceedings of the 2015 38th International Conference on Telecommunications and Signal Processing (TSP)

Strany od

677

Strany do

681

Strany počet

5

BibTex

@inproceedings{BUT108740,
  author="Norbert {Herencsár} and Shahram {Minaei} and Jaroslav {Koton} and Kamil {Vrba}",
  title="Voltage-Mode All-Pass Filter Design Using Simple CMOS Transconductor: Non-Ideal Case Study",
  booktitle="Proceedings of the 2015 38th International Conference on Telecommunications and Signal Processing (TSP)",
  year="2014",
  pages="677--681",
  address="Berlin, Germany",
  doi="10.1109/TSP.2015.7296349",
  isbn="978-1-4799-8497-8"
}