Detail publikace

Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

CHOBOLA, Z. LUŇÁK, M. VANĚK, J. HULICIUS, E. KUSÁK, I.

Originální název

Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.

Klíčová slova

molecular beam epitaxy; excess noise; lasers diodes

Autoři

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.; KUSÁK, I.

Rok RIV

2015

Vydáno

1. 8. 2015

Nakladatel

Faculty of Electrical Engineering and Information Technology of the Slovak University of Technology

Místo

Bratislava

ISSN

1335-3632

Periodikum

Journal of Electrical Engineering

Ročník

66

Číslo

4

Stát

Slovenská republika

Strany od

226

Strany do

230

Strany počet

5

URL

https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml

Plný text v Digitální knihovně

http://hdl.handle.net/11012/84115

BibTex

@article{BUT117577,
  author="Zdeněk {Chobola} and Miroslav {Luňák} and Jiří {Vaněk} and Eduard {Hulicius} and Ivo {Kusák}",
  title="Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy",
  journal="Journal of Electrical Engineering
",
  year="2015",
  volume="66",
  number="4",
  pages="226--230",
  doi="10.2478/jee-2015-0036",
  issn="1335-3632",
  url="https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml"
}