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BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V. KOLKA, Z. ASCOLI, A. TETZLAFF, R.
Originální název
Generalized Rule of Homothety of Ideal Memristors and Their Siblings
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The pinched hysteresis loop area increasing with the square of the frequency of driving harmonic signal on the assumption of constant charge delivered within the half-period belongs to the less known fingerprints of ideal memristor. The paper proves that this fingerprint holds not only for the harmonic excitation: the v-i characteristic of a memristor driven by n-times accelerated and simultaneously n-times amplified signal of arbitrary waveform is a homothetic entity with respect to the original characteristic, with the homothetic center at the v-i origin and with the homothety ratio n. This rule holds for an arbitrary ideal memristor but not for an arbitrary general memristive element. Breaking this rule indicates reliably that the element analyzed is not an ideal memristor.
Klíčová slova
memristor; fingerprint; homothety; pinched hysteresis loop
Autoři
BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.; KOLKA, Z.; ASCOLI, A.; TETZLAFF, R.
Rok RIV
2015
Vydáno
24. 8. 2015
Nakladatel
IEEE
Místo
Trondheim, Norway
ISBN
9781479998777
Kniha
2015 European Conference on Circuit Theory and Design (ECCTD)
Strany od
1
Strany do
4
Strany počet
URL
http://dx.doi.org/10.1109/ECCTD.2015.7300084
BibTex
@inproceedings{BUT118180, author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková} and Zdeněk {Kolka} and Alon {Ascoli} and Ronald {Tetzlaff}", title="Generalized Rule of Homothety of Ideal Memristors and Their Siblings", booktitle="2015 European Conference on Circuit Theory and Design (ECCTD)", year="2015", pages="1--4", publisher="IEEE", address="Trondheim, Norway", doi="10.1109/ECCTD.2015.7300084", isbn="9781479998777", url="http://dx.doi.org/10.1109/ECCTD.2015.7300084" }