Detail publikace

Generalized Rule of Homothety of Ideal Memristors and Their Siblings

BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V. KOLKA, Z. ASCOLI, A. TETZLAFF, R.

Originální název

Generalized Rule of Homothety of Ideal Memristors and Their Siblings

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The pinched hysteresis loop area increasing with the square of the frequency of driving harmonic signal on the assumption of constant charge delivered within the half-period belongs to the less known fingerprints of ideal memristor. The paper proves that this fingerprint holds not only for the harmonic excitation: the v-i characteristic of a memristor driven by n-times accelerated and simultaneously n-times amplified signal of arbitrary waveform is a homothetic entity with respect to the original characteristic, with the homothetic center at the v-i origin and with the homothety ratio n. This rule holds for an arbitrary ideal memristor but not for an arbitrary general memristive element. Breaking this rule indicates reliably that the element analyzed is not an ideal memristor.

Klíčová slova

memristor; fingerprint; homothety; pinched hysteresis loop

Autoři

BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.; KOLKA, Z.; ASCOLI, A.; TETZLAFF, R.

Rok RIV

2015

Vydáno

24. 8. 2015

Nakladatel

IEEE

Místo

Trondheim, Norway

ISBN

9781479998777

Kniha

2015 European Conference on Circuit Theory and Design (ECCTD)

Strany od

1

Strany do

4

Strany počet

4

URL

BibTex

@inproceedings{BUT118180,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková} and Zdeněk {Kolka} and Alon {Ascoli} and Ronald {Tetzlaff}",
  title="Generalized Rule of Homothety of Ideal Memristors and Their Siblings",
  booktitle="2015 European Conference on Circuit Theory and Design (ECCTD)",
  year="2015",
  pages="1--4",
  publisher="IEEE",
  address="Trondheim, Norway",
  doi="10.1109/ECCTD.2015.7300084",
  isbn="9781479998777",
  url="http://dx.doi.org/10.1109/ECCTD.2015.7300084"
}