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GABLECH, I. SVATOŠ, V. CAHA, O. HRABOVSKÝ, M. PRÁŠEK, J. HUBÁLEK, J. ŠIKOLA, T.
Originální název
Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 °C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.
Klíčová slova
Ion-beam sputtering deposition, Kaufman ion-beam source, titanium, thin film, (001) preferential orientation, surface roughness, XRD, AFM
Autoři
GABLECH, I.; SVATOŠ, V.; CAHA, O.; HRABOVSKÝ, M.; PRÁŠEK, J.; HUBÁLEK, J.; ŠIKOLA, T.
Vydáno
1. 4. 2016
Nakladatel
Springer US
Místo
New York
ISSN
0022-2461
Periodikum
Journal of Materials Science
Ročník
51
Číslo
7
Stát
Spojené státy americké
Strany od
3329
Strany do
3336
Strany počet
8
URL
http://link.springer.com/article/10.1007/s10853-015-9648-y
Plný text v Digitální knihovně
http://hdl.handle.net/11012/203130
BibTex
@article{BUT118989, author="Imrich {Gablech} and Vojtěch {Svatoš} and Ondřej {Caha} and Miloš {Hrabovský} and Jan {Prášek} and Jaromír {Hubálek} and Tomáš {Šikola}", title="Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide", journal="Journal of Materials Science", year="2016", volume="51", number="7", pages="3329--3336", doi="10.1007/s10853-015-9648-y", issn="0022-2461", url="http://link.springer.com/article/10.1007/s10853-015-9648-y" }