Detail publikace

A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

HOFMAN, J. HÁZE, J. SHARP, R. HOLMES-SIEDLE, A.

Originální název

A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

This work presents and discusses a test method developed to allow the measurement of total ionising dose induced changes in temperature effects on electronic devices for space and nuclear applications. Two demonstration experiments testing commercial PMOS transistors were performed, using different methods of I-V curve measurement. The temperature of the devices during irradiation was controlled precisely using a commercial thermoelectric cooler. A programmable temperature controller combining digital and analogue control techniques was developed for this project. The experimental results allow better insight into the field of temperature sensitivity of PMOS devices.

Klíčová slova

Automated test equipment, MTC, PMOS, RADFET, TID, temperature coefficients, temperature effects test methods, test software, thermoelectric cooler, thermometers

Autoři

HOFMAN, J.; HÁZE, J.; SHARP, R.; HOLMES-SIEDLE, A.

Rok RIV

2015

Vydáno

26. 11. 2015

Nakladatel

IEEE Periodicals

Místo

Piscataway, NJ 08854 USA

ISSN

0018-9499

Periodikum

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Ročník

62

Číslo

6

Stát

Spojené státy americké

Strany od

2525

Strany do

2531

Strany počet

6

URL

http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=7339494&newsearch=true&queryText=%20method%20for%20measuring%20the%20effect%20of%20total%20ionising%20dose%20on%20temperature%20coefficients%20of%20semiconductor%20devices

BibTex

@article{BUT119754,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Andrew {Holmes-Siedle}",
  title="A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters",
  journal="IEEE TRANSACTIONS ON NUCLEAR SCIENCE",
  year="2015",
  volume="62",
  number="6",
  pages="2525--2531",
  doi="10.1109/TNS.2015.2498948",
  issn="0018-9499",
  url="http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=7339494&newsearch=true&queryText=%20method%20for%20measuring%20the%20effect%20of%20total%20ionising%20dose%20on%20temperature%20coefficients%20of%20semiconductor%20devices"
}