Detail publikace

Local Avalanche Breakdowns in Semiconductor GaAsP Diodes

KOKTAVÝ, P., ŠIKULA, J., ŠTOURAČ, L.

Originální název

Local Avalanche Breakdowns in Semiconductor GaAsP Diodes

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bi-stable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.

Klíčová slova

Avalanche breakdowns, PN junction, Microplasma noise, GaAsP diodes

Autoři

KOKTAVÝ, P., ŠIKULA, J., ŠTOURAČ, L.

Rok RIV

2004

Vydáno

1. 1. 2004

Nakladatel

University of Nis

Místo

Nis, Serbia & Montenegro

ISBN

0-7803-8166-1

Kniha

MIEL 04

Strany od

58

Strany do

61

Strany počet

4

BibTex

@inproceedings{BUT12142,
  author="Pavel {Koktavý} and Josef {Šikula} and Ladislav {Štourač}",
  title="Local Avalanche Breakdowns in Semiconductor GaAsP Diodes",
  booktitle="MIEL 04",
  year="2004",
  pages="4",
  publisher="University of Nis",
  address="Nis, Serbia & Montenegro",
  isbn="0-7803-8166-1"
}