Detail publikace

Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%

KORMOŠ, L. KRATZER, M. KOSTECKI, K. OEME, M. ŠIKOLA, T. KASPER, E. SCHULZE, J. TEICHERT, C.

Originální název

Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Metastable GeSn layers with rather high Sn content between 15% and 18% grown on Si substrates by molecular beam epitaxy were analyzed for the morphological changes on a surface before and after reaching critical layer parameters (thickness, Sn content, and growth temperature) for surface roughening. Atomic-force microscopy investigations were performed as a function of thickness and separately for varying Sn concentrations in the GeSn layer. Epitaxial growth of metastable, uniform GeSn (15% Sn content) layers is obtained up to a critical thickness which increases from about 80 to above 200 nm by reducing the nominal growth temperature from 160 to 140 °C. Phase separation of the complete layer into tin-rich surface protrusions and a Ge-rich matrix takes place beyond the critical thickness.

Klíčová slova

GeSn;molecular beam epitaxy;roughening;atomic force microscopy (AFM);energy-dispersive X-ray spectroscopy (EDX);alloys

Autoři

KORMOŠ, L.; KRATZER, M.; KOSTECKI, K.; OEME, M.; ŠIKOLA, T.; KASPER, E.; SCHULZE, J.; TEICHERT, C.

Vydáno

1. 4. 2017

ISSN

1096-9918

Periodikum

Surface and Interface Analysis

Ročník

49

Číslo

4

Stát

Spojené království Velké Británie a Severního Irska

Strany od

297

Strany do

302

Strany počet

6

BibTex

@article{BUT134998,
  author="Lukáš {Kormoš} and Markus {Kratzer} and Konrad {Kostecki} and Michael {Oeme} and Tomáš {Šikola} and Erich {Kasper} and Jorg {Schulze} and Christian {Teichert}",
  title="Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%",
  journal="Surface and Interface Analysis",
  year="2017",
  volume="49",
  number="4",
  pages="297--302",
  doi="10.1002/sia.6134",
  issn="1096-9918"
}