Detail publikace

Diagnostics of GaAsP Light Emitting Diode PN Junctions

KOKTAVÝ, P., KOKTAVÝ, B.

Originální název

Diagnostics of GaAsP Light Emitting Diode PN Junctions

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.

Klíčová slova

PN Junction, Microplasma noise, Quality, Avalanche breakdown

Autoři

KOKTAVÝ, P., KOKTAVÝ, B.

Rok RIV

2003

Vydáno

1. 1. 2003

Nakladatel

CNRL

Místo

Brno

Strany od

50

Strany do

50

Strany počet

1

BibTex

@inproceedings{BUT13529,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Diagnostics of GaAsP Light Emitting Diode PN Junctions",
  booktitle="Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, Abstracts Book",
  year="2003",
  pages="1",
  publisher="CNRL",
  address="Brno"
}