Detail publikace

Resistorless Electronically Tunable Grounded Inductance Simulator Design

HERENCSÁR, N. KARTCI, A.

Originální název

Resistorless Electronically Tunable Grounded Inductance Simulator Design

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

A new realization of grounded lossless positive inductance simulator (PIS) using simple inverting voltage buffer and unity-gain current follower/inverter (CF±) is reported. Considering the input intrinsic resistance of CF± as useful active parameter, the proposed PIS can be considered as resistorless circuit and it only employs in total 16 Metal-Oxide-Semiconductor (MOS) transistors and a grounded capacitor. The resulting equivalent inductance value of the proposed simulator can be adjusted via change of input intrinsic resistance of CF± by means of its supply voltages. The behavior of the proposed simulator circuit is tested via implementation in voltage-mode 5th-order high-pass filter RLC prototype with Bessel, Butterworth, and Chebyshev I approximation. Theoretical results are verified by SPICE simulations using TSMC 0.18 μm level-7 LO EPI SCN018 CMOS process parameters with ±0.9 V supply voltages.

Klíčová slova

Positive inductance simulator; PIS; grounded lossless circuit; current follower; inverting voltage buffer; 5th-order high-pass filter; RLC prototype; Bessel; Butterworth; Chebyshev I; voltage-mode

Autoři

HERENCSÁR, N.; KARTCI, A.

Vydáno

5. 7. 2017

Nakladatel

IEEE

Místo

Barcelona, Spain

ISBN

978-1-5090-3982-1

Kniha

Proceedings of the 2017 40th International Conference on Telecommunications and Signal Processing (TSP)

Strany od

279

Strany do

282

Strany počet

4

URL

Plný text v Digitální knihovně

BibTex

@inproceedings{BUT138294,
  author="Norbert {Herencsár} and Aslihan {Kartci}",
  title="Resistorless Electronically Tunable Grounded Inductance Simulator Design",
  booktitle="Proceedings of the 2017 40th International Conference on Telecommunications and Signal Processing (TSP)",
  year="2017",
  pages="279--282",
  publisher="IEEE",
  address="Barcelona, Spain",
  doi="10.1109/TSP.2017.8075987",
  isbn="978-1-5090-3982-1",
  url="http://ieeexplore.ieee.org/document/8075987/"
}