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PROCHÁZKA, P. MIKLÁŠ, J. PAZDERA, I. PATOČKA, M. KNOBLOCH, J. CIPÍN, R.
Originální název
Measurement of Power Transistors Dynamic Parameters
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.
Klíčová slova
Power transistor; IGBT transistor; Measurement circuit; Switching process
Autoři
PROCHÁZKA, P.; MIKLÁŠ, J.; PAZDERA, I.; PATOČKA, M.; KNOBLOCH, J.; CIPÍN, R.
Vydáno
1. 1. 2018
Nakladatel
Springer
ISBN
978-3-319-65959-6
Kniha
MECHATRONICS 2017
Strany od
571
Strany do
577
Strany počet
7
URL
https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70
BibTex
@inproceedings{BUT139870, author="Petr {Procházka} and Ján {Mikláš} and Ivo {Pazdera} and Miroslav {Patočka} and Jan {Knobloch} and Radoslav {Cipín}", title="Measurement of Power Transistors Dynamic Parameters", booktitle="MECHATRONICS 2017", year="2018", pages="571--577", publisher="Springer", doi="10.1007/978-3-319-65960-2\{_}70", isbn="978-3-319-65959-6", url="https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70" }