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Detail publikace
KUMNGERN, M. TORTEANCHAI, U. KHATEB, F.
Originální název
0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
This paper describes a new low-voltage low-power transconductance amplifier for low-voltage low-power signal processing applications. The proposed circuit uses bulk-driven quasi-floating gate technique to offer a 0.5 V operating power supply and high operating frequency. The performances of the proposed circuit can be conformed using PSPICE simulations. The simulation result shows that the proposed circuit provides 16.7 uW power consumption and 10 MHz open loop gain. The proposed circuit has been used to realize Tow-Thomas biquad.
Klíčová slova
Amplifier; bulk-driven MOS; quasi-floating gate; low-voltage low-power circuit
Autoři
KUMNGERN, M.; TORTEANCHAI, U.; KHATEB, F.
Vydáno
6. 1. 2018
Nakladatel
IEEE
Místo
Batumi, Georgia
ISBN
978-9972-1-2874-5
Kniha
Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).
Strany od
152
Strany do
155
Strany počet
4
URL
http://ieeexplore.ieee.org/document/8292043/
BibTex
@inproceedings{BUT141736, author="Montree {Kumngern} and Usa {Torteanchai} and Fabian {Khateb}", title="0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier", booktitle="Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).", year="2018", pages="152--155", publisher="IEEE", address="Batumi, Georgia", doi="10.1109/ICECS.2017.8292043", isbn="978-9972-1-2874-5", url="http://ieeexplore.ieee.org/document/8292043/" }