Detail publikace

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Xiao, N.Villena, M.A. Yuan, B. Chen, S. Wang, B. Eliáš, M. Shi, Y. Hui, F. Jing, X. Scheuermann, A. Tang, K. McIntyre, P.C.

Originální název

Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We report an investigation of the optical and structural properties of wurtzite phase AlxGa1−xN/AlNstructure grown on Si(111) within the compositional range of 0 ≤ x ≤ 1. The study focuses on providingessential physical quantities for the fabrication process control, namely the composition dependenceof phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry,Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis.Based on the high quality and nearly strain-free AlxGa1−xN/AlN double layer samples, we determined thecalibration curve for the A1(LO) phonon mode. We have also constructed the ellipsometry model whichuses a-priori knowledge of experimentally measured A1(TO) phonon mode frequencies. From the bestmodel fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropicrefractive indices of the AlxGa1−xN alloys with a very satisfactory accuracy.

Klíčová slova

Gallium nitride, AlloySemiconductor, Thin film, Wafer, MOCVD, Silicon Infrared spectroscopy, Phonon, Ellipsometry, XRD, Raman

Autoři

Xiao, N.;Villena, M.A.; Yuan, B.; Chen, S.; Wang, B.; Eliáš, M.; Shi, Y.; Hui, F.; Jing, X.; Scheuermann, A.; Tang, K.; McIntyre, P.C.

Vydáno

6. 9. 2017

ISSN

1616-301X

Periodikum

ADVANCED FUNCTIONAL MATERIALS

Ročník

27

Číslo

33

Stát

Spolková republika Německo

Strany od

859

Strany do

865

Strany počet

7

URL

https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201700384

BibTex

@article{BUT146398,
  author="Xiao, N. and Villena, M.A. and Yuan, B. and Chen, S. and Wang, B. and Eliáš, M. and Shi, Y. and Hui, F. and Jing, X. and Scheuermann, A. and Tang, K. and McIntyre, P.C.",
  title="Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching",
  journal="ADVANCED FUNCTIONAL MATERIALS",
  year="2017",
  volume="27",
  number="33",
  pages="859--865",
  doi="10.1002/adfm.201700384",
  issn="1616-301X",
  url="https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201700384"
}