Detail publikace

ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization

FILLNER, P. HRDÝ, R. PRÁŠEK, J. NEŠPOR, D. HUBÁLEK, J.

Originální název

ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Atomic layer deposition (ALD) is a strong method of fabrication of high-k dielectrics with excellent properties. We present the ALD grown high-k CMOS compatible dielectrics used for capacitors on a chip application. Several dielectric films based on Al2O3 and HfO2 were grown on high-conductive silicon wafers and used as on-chip circular capacitors with diameter from 100 to 1500 μm. The effect of the interface between dielectric layers was examined in oxide stuck-based films deposited by plasma-enhanced atomic layer deposition. Performed material, structural and electrical analyses of deposited dielectrics confirmed their highly promising properties for application in new generation of 3D capacitors, semiconductor devices and energy storage element.

Klíčová slova

ALD; high-k dielectric; hafnium; aluminum; capcacitor

Autoři

FILLNER, P.; HRDÝ, R.; PRÁŠEK, J.; NEŠPOR, D.; HUBÁLEK, J.

Vydáno

21. 8. 2018

Nakladatel

IEEE Computer Society

Místo

Serbia

ISBN

9781538657317

Kniha

41st International Spring Seminar on Electronics Technology ISSE2018

ISSN

2161-2528

Periodikum

Electronics Technology (ISSE)

Ročník

2018

Stát

Spojené státy americké

Strany od

1

Strany do

5

Strany počet

5

BibTex

@inproceedings{BUT150785,
  author="Patrik {Fillner} and Radim {Hrdý} and Jan {Prášek} and Dušan {Nešpor} and Jaromír {Hubálek}",
  title="ALD Grown Dielectrics for Cap on a Chip: Fabrication and Characterization",
  booktitle="41st International Spring Seminar on Electronics Technology ISSE2018",
  year="2018",
  journal="Electronics Technology (ISSE)",
  volume="2018",
  pages="1--5",
  publisher="IEEE Computer Society",
  address="Serbia",
  doi="10.1109/ISSE.2018.8443766",
  isbn="9781538657317",
  issn="2161-2528"
}