Detail publikace

Optimizing Bias Point of High Efficiency ClassB GaN Power Amplifier for the Best Efficiency

FIŠER, O. GÖTTHANS, T.

Originální název

Optimizing Bias Point of High Efficiency ClassB GaN Power Amplifier for the Best Efficiency

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

High performance amplifiers are always a demanding component in the world of wireless communication. The amplifier is the heart that drives each radio system. We have designed and developed a high performance one-stage class-B GaN power amplifier for drone applications in the S-band (at 1,6 GHz) with maximum output power 6 W. This paper compare fixed settings of the bias point option and optimized bias point for the best efficiency within the entire output power range. Applying the proposed method, that is particularly advantageous for low power performance to improve efficiency by more than 15 %.

Klíčová slova

GaN, S-band, RF power amplifier, Class-B, PAE, Bias circuit, Matlab

Autoři

FIŠER, O.; GÖTTHANS, T.

Vydáno

16. 4. 2019

Nakladatel

University of Pardubice

Místo

Pardubice

ISBN

978-1-5386-9321-6

Kniha

Microwave and Radio Electronics Week MAREW 2019 29th International Conference Radioelektronika 2019

Strany od

110

Strany do

113

Strany počet

4

URL

https://ieeexplore.ieee.org/document/8733566

BibTex

@inproceedings{BUT156997,
  author="Ondřej {Fišer} and Tomáš {Götthans}",
  title="Optimizing Bias Point of High Efficiency ClassB GaN Power Amplifier for the Best Efficiency",
  booktitle="Microwave and Radio Electronics Week MAREW 2019 29th International Conference Radioelektronika 2019",
  year="2019",
  pages="110--113",
  publisher="University of Pardubice",
  address="Pardubice",
  doi="10.1109/RADIOELEK.2019.8733566",
  isbn="978-1-5386-9321-6",
  url="https://ieeexplore.ieee.org/document/8733566"
}