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RAJ, N. KUMAR RANJAN, R. KHATEB, F.
Originální název
Flux-Controlled Memristor Emulator and Its Experimental Results
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
A flux-controlled memristor emulator built with off-the-shelf electronic devices and based on a TiO₂ model is presented in this article. The circuit proposed in this article uses the current mode approach based analog building blocks such as a second-generation current conveyor (CCII) and an operational transconductance amplifier (OTA) as an active element with few passive elements. The circuit shows a clear fingerprint of an ideal memristor. The offered emulator circuit can be made to operate in incremental and decremental modes and functions well up to 26.3 MHz. Nonvolatility, Monte Carlo sampling, and corner analysis simulations are executed to verify the robustness of the circuit. The functional verification of the presented circuit is performed using the 0.18-μm CMOS parameter at a supply voltage of ±1.2 V. The experimental demonstration is carried out by making a prototype on a breadboard using ICs AD844AN and CA3080, which exhibits a good agreement with theoretical and simulation results. The layout of the circuit, which requires a total chip area of 75 x 70 μm², is also created. Single/parallel combinations of a memristor, a high-pass filter, and a chaotic system are presented to demonstrate its application.
Klíčová slova
Current mode, Memristor emulator, Pinched hysteresis loop, Chua’s oscillator.
Autoři
RAJ, N.; KUMAR RANJAN, R.; KHATEB, F.
Vydáno
1. 3. 2020
Nakladatel
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Místo
USA
ISSN
1063-8210
Periodikum
IEEE Trans. on VLSI Systems.
Ročník
28
Číslo
4, IF: 2.037
Stát
Spojené státy americké
Strany od
1050
Strany do
1061
Strany počet
12
URL
https://doi.org/10.1109/TVLSI.2020.2966292
BibTex
@article{BUT161003, author="Niranjan {Raj} and Rajeev {Kumar Ranjan} and Fabian {Khateb}", title="Flux-Controlled Memristor Emulator and Its Experimental Results", journal="IEEE Trans. on VLSI Systems.", year="2020", volume="28", number="4, IF: 2.037", pages="1050--1061", doi="10.1109/TVLSI.2020.2966292", issn="1063-8210", url="https://doi.org/10.1109/TVLSI.2020.2966292" }