Detail publikace

Infinite selectivity of wet SiO2 etching in respect to Al

GABLECH, I. BRODSKÝ, J. PEKÁREK, J. NEUŽIL, P.

Originální název

Infinite selectivity of wet SiO2 etching in respect to Al

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO2 as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent attack of the Al layer, achieving an outstanding etch rate of thermally grown SiO2 of ≈1 µm·min−1. We also verified that this etching solution only minimally affected the Al layer, as the chip immersion for ≈9 min increased the Al layer sheet resistance by only ≈7.6%. The proposed etching method was performed in an ordinary fume hood in a polytetrafluorethylene beaker at elevated temperature of ≈70 °C using water bath on a hotplate. It allowed removal of the SiO2 sacrificial layer in the presence of Al without the necessity of handling highly toxic HF gas.

Klíčová slova

SiO2 etching; microelectromechanical systems (MEMS) ; sacrificial layer; selectivity

Autoři

GABLECH, I.; BRODSKÝ, J.; PEKÁREK, J.; NEUŽIL, P.

Vydáno

31. 3. 2020

Nakladatel

MDPI

Místo

Basel, Switzerland

ISSN

2072-666X

Periodikum

Micromachines

Ročník

11

Číslo

4

Stát

Švýcarská konfederace

Strany od

365

Strany do

371

Strany počet

7

URL

https://www.mdpi.com/2072-666X/11/4/365

Plný text v Digitální knihovně

http://hdl.handle.net/11012/186781

BibTex

@article{BUT163196,
  author="Imrich {Gablech} and Jan {Brodský} and Jan {Pekárek} and Pavel {Neužil}",
  title="Infinite selectivity of wet SiO2 etching in respect to Al",
  journal="Micromachines",
  year="2020",
  volume="11",
  number="4",
  pages="365--371",
  doi="10.3390/mi11040365",
  issn="2072-666X",
  url="https://www.mdpi.com/2072-666X/11/4/365"
}