Detail publikace

RTS in Submicron MOSFETs: High Field Effects

PAVELKA, J., SEDLÁKOVÁ, V., ŠIKULA, J., HAVRÁNEK, J., TACANO, M., HASHIGUCHI, S., TOITA, M.

Originální název

RTS in Submicron MOSFETs: High Field Effects

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

A systematic analysis of two level RTS signal was made to obtain information on capture and emission processes as a function of gate voltage, drain current and temperature for low and high lateral electric field.

Klíčová slova v angličtině

RTS noise, high electric field, MOSFET, MIS structure

Autoři

PAVELKA, J., SEDLÁKOVÁ, V., ŠIKULA, J., HAVRÁNEK, J., TACANO, M., HASHIGUCHI, S., TOITA, M.

Rok RIV

2005

Vydáno

1. 1. 2005

Nakladatel

University of Salamanca

Místo

Salamanka, Španělsko

ISBN

0-7354-0267-1

Kniha

Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780

Strany od

339

Strany do

342

Strany počet

4

BibTex

@inproceedings{BUT16493,
  author="Jan {Pavelka} and Vlasta {Sedláková} and Josef {Šikula} and Jan {Havránek} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS in Submicron MOSFETs: High Field Effects",
  booktitle="Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780",
  year="2005",
  pages="4",
  publisher="University of Salamanca",
  address="Salamanka, Španělsko",
  isbn="0-7354-0267-1"
}