Detail publikace

Hooge Noise Parameter of GaN HFETs on SiC

TANUMA, N. PAVELKA, J. YAGI, S. OKUMURA, H. UEMURA, T. TACANO, M. HASHIGUCHI, S. ŠIKULA, J.

Originální název

Hooge Noise Parameter of GaN HFETs on SiC

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5.

Klíčová slova

GaN, HFET, noise

Autoři

TANUMA, N.; PAVELKA, J.; YAGI, S.; OKUMURA, H.; UEMURA, T.; TACANO, M.; HASHIGUCHI, S.; ŠIKULA, J.

Rok RIV

2005

Vydáno

1. 1. 2005

Nakladatel

University of Salamanca

Místo

Salamanka, Španělsko

ISBN

0-7354-0267-1

Kniha

Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780

Strany od

343

Strany do

346

Strany počet

4

BibTex

@inproceedings{BUT16500,
  author="Nobuhisa {Tanuma} and Jan {Pavelka} and Shuichi {Yagi} and Hajime {Okumura} and T. {Uemura} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Josef {Šikula}",
  title="Hooge Noise Parameter of GaN HFETs on SiC",
  booktitle="Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780",
  year="2005",
  pages="4",
  publisher="University of Salamanca",
  address="Salamanka, Španělsko",
  isbn="0-7354-0267-1"
}