Detail publikace

Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors

BARTOŠÍK, M. MACH, J. PIASTEK, J. NEZVAL, D. KONEČNÝ, M. ŠVARC, V. ENSSLIN, K. ŠIKOLA, T.

Originální název

Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g. SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.

Klíčová slova

graphene; sensor; relative humidity; water; hysteresis; gate voltage; physisorption

Autoři

BARTOŠÍK, M.; MACH, J.; PIASTEK, J.; NEZVAL, D.; KONEČNÝ, M.; ŠVARC, V.; ENSSLIN, K.; ŠIKOLA, T.

Vydáno

25. 9. 2020

Nakladatel

AMER CHEMICAL SOC

Místo

WASHINGTON

ISSN

2379-3694

Periodikum

ACS Sensors

Ročník

5

Číslo

9

Stát

Spojené státy americké

Strany od

2940

Strany do

2949

Strany počet

10

URL

https://pubs.acs.org/doi/10.1021/acssensors.0c01441

BibTex

@article{BUT169679,
  author="Miroslav {Bartošík} and Jindřich {Mach} and Jakub {Piastek} and David {Nezval} and Martin {Konečný} and Vojtěch {Švarc} and Klaus {Ensslin} and Tomáš {Šikola}",
  title="Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors",
  journal="ACS Sensors",
  year="2020",
  volume="5",
  number="9",
  pages="2940--2949",
  doi="10.1021/acssensors.0c01441",
  issn="2379-3694",
  url="https://pubs.acs.org/doi/10.1021/acssensors.0c01441"
}