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RUZGAR, S. CAGLAR, Y. POLAT, Ö. SOBOLA, D. CAGLAR, M.
Originální název
The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Fe-substituted CuO thin films have been prepared by spin coating onto cleaned n-Si and glass substrates at various concentrations (2%, 6%, 10%). The AFM results show that the surface morphology of CuO thin films is strongly influenced by film thickness. The optical band gaps of the films were determined with Kubelka Munk function by using diffuse reflectance data and a reduction of 59 meV in the optical band gap was observed for 10% Fe doped CuO film. The ideality factors and barrier height values of the diodes have been varied between 3.17 and 2.74 and 0.82 and 0.71 eV with the 2%, 6%, and 10% Fe doping, respectively. Additionally, the series resistance (RS) values have been defined via employing the Cheung-Cheung method. The highest and lowest values of RS have been calculated as 1332 ohm for CuO/n-Si and 18 ohm for 6%Fe:CuO/n-Si, respectively. The electrical characteristics of these heterojunction structures have been examined under dark and different illumination intensities. Moreover, their photovoltaic performances have been compared. Furthermore, the power conversion efficiencies of CuO:Fe/n-Si have been calculated and found to be increased from 0.1 to 1.13% with increasing Fe doping.
Klíčová slova
THIN-FILMS; ELECTRICAL-PROPERTIES; CURRENT-VOLTAGE; CUPRIC OXIDE; DIODE; NANOSTRUCTURES; FABRICATION; GROWTH
Autoři
RUZGAR, S.; CAGLAR, Y.; POLAT, Ö.; SOBOLA, D.; CAGLAR, M.
Vydáno
1. 8. 2021
Nakladatel
SPRINGER
Místo
DORDRECHT
ISSN
0957-4522
Periodikum
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Ročník
32
Číslo
15
Stát
Nizozemsko
Strany od
20755
Strany do
20766
Strany počet
12
URL
https://link.springer.com/article/10.1007%2Fs10854-021-06589-9
BibTex
@article{BUT172211, author="Serif {Ruzgar} and Yasemin {Caglar} and Özgür {Polat} and Dinara {Sobola} and Mujdat {Caglar}", title="The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions", journal="JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS", year="2021", volume="32", number="15", pages="20755--20766", doi="10.1007/s10854-021-06589-9", issn="0957-4522", url="https://link.springer.com/article/10.1007%2Fs10854-021-06589-9" }