Detail publikace

Field emission properties of sharp tungsten cathodes coated with a thin resilient oxide barrier

BURDA, D. ALLAHAM, M. KNÁPEK, A. SOBOLA, D. MOUSA, M.

Originální název

Field emission properties of sharp tungsten cathodes coated with a thin resilient oxide barrier

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This research is aimed towards more in-depth understanding of field emission properties of tungsten single tip field emitters (STFEs) coated with tens of nanometer thin barrier of selected refractory oxides such as Al 2 O 3 . Introducing the additional barrier into metal-vacuum interface system of the emitter can be beneficial for an improvement of its performance. The pristine tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barriers were prepared by using low-temperature atomic layer deposition (ALD). Field emission was studied in field emission microscope (FEM) working in UHV vacuum (< 1×10 −7 Pa), experimental field emission data were analyzed by the so-called Murphy-Good plots, revealing the non-orthodox behavior of the prepared emitters.

Klíčová slova

Fabrication; Atomic layer deposition; Microscopy; Tungsten; Voltage; Switches; Finite element analysis

Autoři

BURDA, D.; ALLAHAM, M.; KNÁPEK, A.; SOBOLA, D.; MOUSA, M.

Vydáno

17. 11. 2021

Nakladatel

2021 34th International Vacuum Nanoelectronics Conference (IVNC)

Místo

Lyon, France

ISBN

978-1-6654-2589-6

Kniha

2021 34th International Vacuum Nanoelectronics Conference (IVNC)

Strany od

178

Strany do

179

Strany počet

2

URL

https://ieeexplore.ieee.org/document/9600704/

BibTex

@inproceedings{BUT175016,
  author="Daniel {Burda} and Mohammad Mahmoud {Allaham} and Alexandr {Knápek} and Dinara {Sobola} and Marwan {Mousa}",
  title="Field emission properties of sharp tungsten cathodes coated with a thin resilient oxide barrier
",
  booktitle="2021 34th International Vacuum Nanoelectronics Conference (IVNC)",
  year="2021",
  pages="178--179",
  publisher="2021 34th International Vacuum Nanoelectronics Conference (IVNC)",
  address="Lyon, France",
  doi="10.1109/IVNC52431.2021.9600704",
  isbn="978-1-6654-2589-6",
  url="https://ieeexplore.ieee.org/document/9600704/"
}