Detail publikace

Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

MANIŠ, J. MACH, J. BARTOŠÍK, M. ŠAMOŘIL, T. HORÁK, M. ČALKOVSKÝ, V. NEZVAL, D. KACHTÍK, L. KONEČNÝ, M. ŠIKOLA, T.

Originální název

Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures.

Klíčová slova

2D GaN; LATTICE PARAMETERS

Autoři

MANIŠ, J.; MACH, J.; BARTOŠÍK, M.; ŠAMOŘIL, T.; HORÁK, M.; ČALKOVSKÝ, V.; NEZVAL, D.; KACHTÍK, L.; KONEČNÝ, M.; ŠIKOLA, T.

Vydáno

15. 7. 2022

Nakladatel

Royal Society of Chemistry

Místo

CAMBRIDGE

ISSN

2516-0230

Periodikum

NANOSCALE ADVANCES

Ročník

1

Číslo

1

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

8

Strany počet

8

URL

https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F

Plný text v Digitální knihovně

http://hdl.handle.net/11012/208238

BibTex

@article{BUT178846,
  author="Jaroslav {Maniš} and Jindřich {Mach} and Miroslav {Bartošík} and Tomáš {Šamořil} and Michal {Horák} and Vojtěch {Čalkovský} and David {Nezval} and Lukáš {Kachtík} and Martin {Konečný} and Tomáš {Šikola}",
  title="Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions",
  journal="NANOSCALE ADVANCES",
  year="2022",
  volume="1",
  number="1",
  pages="1--8",
  doi="10.1039/d2na00175f",
  issn="2516-0230",
  url="https://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175F"
}