Detail publikace

COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

GLOGINJIC, M. ERICH, M. MRAVIK, Ž. VRBAN, B. ČERBA, Š. LÜLEY, J. FILOVÁ, V. KATOVSKÝ, K. ŠŤASTNÝ, O. BURIAN, J. PETROVIC, S.

Originální název

COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used as an important construction material for environments with extreme conditions, like those present in nu clear reactors. As such, it is constantly exposed to energetic particles (e. g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single 6H-SiC crystal to the ion fluences of 1.359.10(15) cm(-2), 6.740.10(15) cm(-2), and 2.02.10(16) cm(-2). These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra were analyzed by channeling simulation phenomenological computer code (CSIM) to obtain quantitative crystal damage depth profiles. The difference between the positions of damage profile maxima obtained by CSIM code and one simulated with stopping and range of ions in matter (SRIM), a Monte Carlo based computer code focused on ion implantation simulation in random crystal direction only, is about 10 %. Therefore, due to small profile depth shifts, the usage of the iterative procedure for calculating crystal damage depth profiles is proposed. It was shown that profiles obtained by iterative procedure show very good agreement with the ones obtained with CSIM code. Addition ally, with the introduction of channeling to random energy loss ratio the energy to depth profile scale conversion, the agreement with CSIM profiles becomes excellent.

Klíčová slova

silicon carbide; computer simulation; iterative procedure; RBS/C and EBS/C spectrometry

Autoři

GLOGINJIC, M.; ERICH, M.; MRAVIK, Ž.; VRBAN, B.; ČERBA, Š.; LÜLEY, J.; FILOVÁ, V.; KATOVSKÝ, K.; ŠŤASTNÝ, O.; BURIAN, J.; PETROVIC, S.

Vydáno

16. 6. 2022

Nakladatel

VINCA INST NUCLEAR SCI

Místo

MIHAJLA PETROVICA-ALASA 12-14 VINCA, 11037 BELGRADE. POB 522, BELGRADE 11001, SERBIA

ISSN

1451-3994

Periodikum

NUCL TECHNOL RADIAT

Ročník

37

Číslo

2

Stát

Srbská republika

Strany od

128

Strany do

137

Strany počet

10

URL

https://ntrp.vinca.rs/2022_2/Contents2022_2.html

BibTex

@article{BUT181366,
  author="Marko {Gloginjic} and Marko {Erich} and Željko {Mravik} and Branislav {Vrban} and Štefan {Čerba} and Jakub {Lüley} and Vendula {Filová} and Karel {Katovský} and Ondřej {Šťastný} and Jiří {Burian} and Srdjan {Petrovic}",
  title="COMPARATIVE STUDY OF THE MeV ION CHANNELING IMPLANTATION INDUCED DAMAGE IN 6H-SiC BY THE ITERATIVE PROCEDURE AND PHENOMENOLOGICAL CSIM COMPUTER CODE",
  journal="NUCL TECHNOL RADIAT",
  year="2022",
  volume="37",
  number="2",
  pages="128--137",
  doi="10.2298/NTRP2202128G",
  issn="1451-3994",
  url="https://ntrp.vinca.rs/2022_2/Contents2022_2.html"
}