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GABLECH, I. MIGLIACCIO, L. BRODSKÝ, J. HAVLÍČEK, M. PODEŠVA, P. HRDÝ, R. EHLICH, J. GRYSZEL, M. GLOWACKI, E.
Originální název
High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Bioelectronic devices such as neural stimulation and recording devices require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion-beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion-beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.
Klíčová slova
bioelectronics, ion-beam sputtering, multielectrode arrays, titanium nitride
Autoři
GABLECH, I.; MIGLIACCIO, L.; BRODSKÝ, J.; HAVLÍČEK, M.; PODEŠVA, P.; HRDÝ, R.; EHLICH, J.; GRYSZEL, M.; GLOWACKI, E.
Vydáno
2. 2. 2023
Nakladatel
Wiley-VCH GmbH
Místo
Německo
ISSN
2199-160X
Periodikum
Advanced Electronic Materials
Ročník
9
Číslo
4
Stát
Spolková republika Německo
Strany od
1
Strany do
11
Strany počet
URL
https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980
Plný text v Digitální knihovně
http://hdl.handle.net/11012/213717
BibTex
@article{BUT182433, author="Imrich {Gablech} and Ludovico {Migliaccio} and Jan {Brodský} and Marek {Havlíček} and Pavel {Podešva} and Radim {Hrdý} and Jiří {Ehlich} and Maciej {Gryszel} and Eric Daniel {Glowacki}", title="High-Conductivity Stoichiometric Titanium Nitride for Bioelectronics", journal="Advanced Electronic Materials", year="2023", volume="9", number="4", pages="11", doi="10.1002/aelm.202200980", issn="2199-160X", url="https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202200980" }