Detail publikace

Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation

ČECH, V. BRÁNECKÝ, M.

Originální název

Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Lower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.

Klíčová slova

degree of dissociation; nonthermal plasma; organosilicon precursors; plasma-enhanced chemical vapor deposition (PE-CVD); sticking coefficient; thin films

Autoři

ČECH, V.; BRÁNECKÝ, M.

Vydáno

23. 3. 2023

Nakladatel

Wiley

ISSN

1612-8869

Periodikum

Plasma Processes and Polymers

Ročník

20

Číslo

7

Stát

Spolková republika Německo

Strany od

1

Strany do

11

Strany počet

11

URL

https://onlinelibrary.wiley.com/doi/full/10.1002/ppap.202300019

Plný text v Digitální knihovně

http://hdl.handle.net/11012/244276

BibTex

@article{BUT184061,
  author="Vladimír {Čech} and Martin {Bránecký}",
  title="Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation",
  journal="Plasma Processes and Polymers",
  year="2023",
  volume="20",
  number="7",
  pages="1--11",
  doi="10.1002/ppap.202300019",
  issn="1612-8869",
  url="https://onlinelibrary.wiley.com/doi/full/10.1002/ppap.202300019"
}