Detail publikace

FET Gate Driver Utilising Transient Gate Overvoltage

TOMÍČEK, P. BOUŠEK, J.

Originální název

FET Gate Driver Utilising Transient Gate Overvoltage

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In this paper a method for driving field effect transistors is described. This method uses a short high-voltage pulse on the gate to mitigate the effects of parasitic gate inductance and resistance. The proposed driver was able to reduce the fall time of drain voltage from 12 ns to 4 ns compared to conventional driving.

Klíčová slova

gate driver, FET, gate overvoltage, switching speed

Autoři

TOMÍČEK, P.; BOUŠEK, J.

Vydáno

6. 7. 2023

Nakladatel

IEEE

ISBN

979-8-3503-3484-5

Kniha

2023 46th International Spring Seminar on Electronics Technology (ISSE)

ISSN

2161-2536

Periodikum

International Spring Seminar on Electronics Technology ISSE

Ročník

46

Číslo

1

Stát

Spojené státy americké

Strany od

1

Strany do

5

Strany počet

5

URL

https://ieeexplore.ieee.org/document/10168351

BibTex

@inproceedings{BUT184434,
  author="Pavel {Tomíček} and Jaroslav {Boušek}",
  title="FET Gate Driver Utilising Transient Gate Overvoltage",
  booktitle="2023 46th International Spring Seminar on Electronics Technology (ISSE)",
  year="2023",
  journal="International Spring Seminar on Electronics Technology ISSE",
  volume="46",
  number="1",
  pages="1--5",
  publisher="IEEE",
  doi="10.1109/ISSE57496.2023.10168351",
  isbn="979-8-3503-3484-5",
  issn="2161-2536",
  url="https://ieeexplore.ieee.org/document/10168351"
}