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KHATEB, F. BIOLEK, D. MUSIL, V.
Originální název
Principle of Bulk-Driven MOS Transistor.
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Recently, integrated circuit designers have been putting an increasing effort into the reduction of supply voltage and power dissipation of digital, analog and mixed circuits and systems. This is mainly due to the following factors. First of all, the need to reduce power consumption in modern high-density digital systems. As chip components get closer together, the problem of heat dissipation increases while break-down voltages of the components on chip reduce as geometries become smaller. Secondly, the explosive growth of the market of portable battery-operated electronics, which has stimulated the demand for LP topologies able to operate at reduced supplies and to ensure a longer battery lifetime. This paper suggests an elegant approach of Bulk-Driven MOS transistor to reduce the needed voltage supply.
Klíčová slova
Bulk-Driven MOS transistor, low-voltage low-power CMOS
Autoři
KHATEB, F.; BIOLEK, D.; MUSIL, V.
Vydáno
25. 4. 2006
Nakladatel
Izhevsk State Technical University
Místo
Izhevsk State
ISBN
5-7526-0261-0
Kniha
Technical Universities: Integration with European and World Education Systems
Strany od
187
Strany do
190
Strany počet
4
BibTex
@inproceedings{BUT21431, author="Fabian {Khateb} and Dalibor {Biolek} and Vladislav {Musil}", title="Principle of Bulk-Driven MOS Transistor.", booktitle="Technical Universities: Integration with European and World Education Systems", year="2006", pages="4", publisher="Izhevsk State Technical University", address="Izhevsk State", isbn="5-7526-0261-0" }