Detail publikace

Principle of Bulk-Driven MOS Transistor.

KHATEB, F. BIOLEK, D. MUSIL, V.

Originální název

Principle of Bulk-Driven MOS Transistor.

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Recently, integrated circuit designers have been putting an increasing effort into the reduction of supply voltage and power dissipation of digital, analog and mixed circuits and systems. This is mainly due to the following factors. First of all, the need to reduce power consumption in modern high-density digital systems. As chip components get closer together, the problem of heat dissipation increases while break-down voltages of the components on chip reduce as geometries become smaller. Secondly, the explosive growth of the market of portable battery-operated electronics, which has stimulated the demand for LP topologies able to operate at reduced supplies and to ensure a longer battery lifetime. This paper suggests an elegant approach of Bulk-Driven MOS transistor to reduce the needed voltage supply.

Klíčová slova

Bulk-Driven MOS transistor, low-voltage low-power CMOS

Autoři

KHATEB, F.; BIOLEK, D.; MUSIL, V.

Vydáno

25. 4. 2006

Nakladatel

Izhevsk State Technical University

Místo

Izhevsk State

ISBN

5-7526-0261-0

Kniha

Technical Universities: Integration with European and World Education Systems

Strany od

187

Strany do

190

Strany počet

4

BibTex

@inproceedings{BUT21431,
  author="Fabian {Khateb} and Dalibor {Biolek} and Vladislav {Musil}",
  title="Principle of Bulk-Driven MOS Transistor.",
  booktitle="Technical Universities: Integration with European and World Education Systems",
  year="2006",
  pages="4",
  publisher="Izhevsk State Technical University",
  address="Izhevsk State",
  isbn="5-7526-0261-0"
}