Innovative electric model of n+p silicon solar cells

článek ve sborníku ve WoS nebo Scopus

angličtina

This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model will be put forward, in which the solar cell current will be expressed by means of a transcendent equation. The applicability of the theoretical model has been verified by comparing with the K4 and Z1 specimen's characteristic. By approximating the measured curves by our theoretical circuit function we managed to get new pieces of information concerning the processes taking place in the specimen.

Silicon Solar Cell, Non-destructive Testing, Electric model

MACKŮ, R.; KOKTAVÝ, P.; ŠKARVADA, P.

2009

21. 10. 2010

WIP-Renewable Energies

3-936338-24-8

Proceedings of 24rd European Photovoltaic Solar Energy Conference

439

443

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