Detail publikace

MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL

PAVLÍK, M. VRBA, R.

Originální název

MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The paper deals with the design of the first generation memory cell MATLAB model. There are described errors of the first generation switched current (SI) memory cell and also impact of the SI technique on the transfer function of the memory cell. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.

Klíčová slova

switched current, memory cell, errors

Autoři

PAVLÍK, M.; VRBA, R.

Rok RIV

2009

Vydáno

1. 9. 2009

Nakladatel

Ing. Novotný nakladatelství

Místo

Brno

ISBN

978-80-214-3933-7

Kniha

EDS' 09 IMAPS CS International Conference Proceedings

Strany od

340

Strany do

343

Strany počet

4

BibTex

@inproceedings{BUT33976,
  author="Michal {Pavlík} and Radimír {Vrba}",
  title="MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL",
  booktitle="EDS' 09 IMAPS CS International Conference Proceedings",
  year="2009",
  pages="340--343",
  publisher="Ing. Novotný nakladatelství",
  address="Brno",
  isbn="978-80-214-3933-7"
}