Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikace
PAVLÍK, M. VRBA, R.
Originální název
MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The paper deals with the design of the first generation memory cell MATLAB model. There are described errors of the first generation switched current (SI) memory cell and also impact of the SI technique on the transfer function of the memory cell. Since, the errors depend on fabrication technology, design of the memory cell proceed using AMIS CMOS 0.7 m technology. The CADENCE software was used to simulations. Consequently, the differences compared with ideal transfer function were described and sources of the errors were expressed. On the basis of the error expressions the model of the real switched current memory cell was proposed. Results and comparison of the CADENCE simulation are presented as well.
Klíčová slova
switched current, memory cell, errors
Autoři
PAVLÍK, M.; VRBA, R.
Rok RIV
2009
Vydáno
1. 9. 2009
Nakladatel
Ing. Novotný nakladatelství
Místo
Brno
ISBN
978-80-214-3933-7
Kniha
EDS' 09 IMAPS CS International Conference Proceedings
Strany od
340
Strany do
343
Strany počet
4
BibTex
@inproceedings{BUT33976, author="Michal {Pavlík} and Radimír {Vrba}", title="MATLAB SIMULINK MODEL OF THE 1ST GENERATION SWITCHED-CURRENT MEMORY CELL", booktitle="EDS' 09 IMAPS CS International Conference Proceedings", year="2009", pages="340--343", publisher="Ing. Novotný nakladatelství", address="Brno", isbn="978-80-214-3933-7" }