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BLACK, G. BRETT, L. MORETTO, P. BOUSEK, J.
Originální název
Performance Testing of a MOSFET Sensor
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.
Klíčová slova
Safety Sensor performance testing, Hydrogen detection, MOSFET Hydrogen sensor
Autoři
BLACK, G.; BRETT, L.; MORETTO, P.; BOUSEK, J.
Rok RIV
2010
Vydáno
21. 5. 2010
ISBN
978-3-89336-655-2
Kniha
Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany
Strany od
301
Strany do
307
Strany počet
7
BibTex
@inproceedings{BUT35005, author="BLACK, G. and BRETT, L. and MORETTO, P. and BOUSEK, J.", title="Performance Testing of a MOSFET Sensor", booktitle="Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany", year="2010", pages="301--307", isbn="978-3-89336-655-2" }