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ŠKARVADA, P. TOMANEK, P. MACKŮ, R.
Originální název
Characterization of Si Solar Cells Imperfections in the Near-Field
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
This paper deals with microscale localization of solar cell imperfections. Imperfections are areas on the solar cell that emits light in visible range when the cell is reverse-biased. Samples under investigation are monocrystalline silicon solar cells. Local topography, near-field optical beam induced current, local optical properties and local visible light emission using high resolution and high sensitive techniques together with light emission thermal dependence have been measured. Generally light emission occurs in places where the near-field optical beam induced current has its local minima. The results when there is no evident correlation between light emission and near-field optical beam induced current are presented in this paper. It was found that one light emission macroscopic spot can consist of several small light emission spots which diameters are less than 8 ?m.
Klíčová slova
silicon solar cell, defects, reverse-bias electroluminescence
Autoři
ŠKARVADA, P.; TOMANEK, P.; MACKŮ, R.
Rok RIV
2010
Vydáno
10. 9. 2010
Nakladatel
WIP - Renewable Energies
Místo
Valencia
ISBN
3-936338-26-4
Kniha
25th European Photovoltaic Solar Energy Conference (id 18618)
Strany od
351
Strany do
354
Strany počet
4
BibTex
@inproceedings{BUT35590, author="Pavel {Škarvada} and Pavel {Tomanek} and Robert {Macků}", title="Characterization of Si Solar Cells Imperfections in the Near-Field", booktitle="25th European Photovoltaic Solar Energy Conference (id 18618)", year="2010", pages="351--354", publisher="WIP - Renewable Energies", address="Valencia", isbn="3-936338-26-4" }