Detail publikace

Imaging reflectometery in situ

URBÁNEK, M. SPOUSTA, J. BĚHOUNEK, T. ŠIKOLA, T.

Originální název

Imaging reflectometery in situ

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

An innovative method of in situ real-time optical monitoring of thin film deposition and etching is presented. In this technique, intensity maps of a thin film corresponding to a series of wavelengths selected by a monochromator 300 - 800 nm are recorded by a CCD camera. From the maps the reflectance spectra at individual points of the sample surface can be extracted. By fitting the reflectance spectra to the theoretical ones, the maps of a thin film morphology (including optical parameters) and their temporal development during technological processes can be obtained. The method was tested by in situ observation of the growth of silicon nitride and silicon oxide thin films prepared by ion beam sputtering and by the monitoring of etching of thermally grown SiO2 thin films.

Klíčová slova

Reflectometry; Thin films; Optical characterization

Autoři

URBÁNEK, M.; SPOUSTA, J.; BĚHOUNEK, T.; ŠIKOLA, T.

Rok RIV

2007

Vydáno

23. 8. 2007

ISSN

0003-6935

Periodikum

Applied Optics

Ročník

46

Číslo

25

Stát

Spojené státy americké

Strany od

6309

Strany do

6313

Strany počet

5

BibTex

@article{BUT44051,
  author="Michal {Urbánek} and Jiří {Spousta} and Tomáš {Běhounek} and Tomáš {Šikola}",
  title="Imaging reflectometery in situ",
  journal="Applied Optics",
  year="2007",
  volume="46",
  number="25",
  pages="6309--6313",
  issn="0003-6935"
}