Detail publikace

Hooge noise parameter of epitaxial n-GaN on sapphire

TANUMA, N. TACANO, M. PAVELKA, J. HASHIGUCHI, S. ŠIKULA, J. MATSUI, T.

Originální název

Hooge noise parameter of epitaxial n-GaN on sapphire

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period.

Klíčová slova

GaN, 1/f noise

Autoři

TANUMA, N.; TACANO, M.; PAVELKA, J.; HASHIGUCHI, S.; ŠIKULA, J.; MATSUI, T.

Rok RIV

2005

Vydáno

1. 1. 2005

Nakladatel

Elsevier

ISSN

0038-1101

Periodikum

Solid State Electronics

Ročník

49

Číslo

6

Stát

Spojené státy americké

Strany od

865

Strany do

870

Strany počet

6

BibTex

@article{BUT45789,
  author="Nobuhisa {Tanuma} and Munecazu {Tacano} and Jan {Pavelka} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui}",
  title="Hooge noise parameter of epitaxial n-GaN on sapphire",
  journal="Solid State Electronics",
  year="2005",
  volume="49",
  number="6",
  pages="6",
  issn="0038-1101"
}