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GRMELA, L. KALA, J. TOMÁNEK, P.
Originální název
Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.
Klíčová slova
optical phenomena, SNOM, InAs/GaAs, quantum dot, artificial molecule
Autoři
GRMELA, L.; KALA, J.; TOMÁNEK, P.
Rok RIV
2006
Vydáno
31. 1. 2006
Nakladatel
SPIE
Místo
Bellingham, USA
ISSN
0277-786X
Periodikum
Proceedings of SPIE
Ročník
6180
Číslo
Stát
Spojené státy americké
Strany od
517
Strany do
522
Strany počet
6
BibTex
@article{BUT45824, author="Lubomír {Grmela} and Jaroslav {Kala} and Pavel {Tománek}", title="Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules", journal="Proceedings of SPIE", year="2006", volume="6180", number="6180", pages="517--522", issn="0277-786X" }