Detail publikace

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than 250 nm)

LÉTAL, P., TOMÁNEK, P., DOBIS, P., GRMELA, L., BRÜSTLOVÁ, J.

Originální název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than 250 nm)

Typ

kapitola v knize

Jazyk

angličtina

Originální abstrakt

Locally resolved topography and spectroscopy of semiconductors show both the better lateral resolution than 250 nm using nondestructive testing.

Klíčová slova

local topography, local spectroscopy, semiconductors, SNOM

Autoři

LÉTAL, P., TOMÁNEK, P., DOBIS, P., GRMELA, L., BRÜSTLOVÁ, J.

Rok RIV

1998

Vydáno

20. 9. 1998

Nakladatel

Technical University of Brno

Místo

Brno

ISBN

80-214-119

Kniha

Electronic devices and systems (EDS´98)

Strany od

169

Strany do

172

Strany počet

4

BibTex

@inbook{BUT54077,
  author="Petr {Létal} and Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela} and Jitka {Brüstlová}",
  title="Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than 250 nm)",
  booktitle="Electronic devices and systems (EDS´98)",
  year="1998",
  publisher="Technical University of Brno",
  address="Brno",
  pages="4",
  isbn="80-214-119"
}