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ŠKARVADA, P. TOMÁNEK, P. GRMELA, L.
Originální název
Influence of laser cutting on p-n junction behavior of solar cell
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing. Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction.
Klíčová slova
pn junction, laser cutting, solar cell, efficiency
Autoři
ŠKARVADA, P.; TOMÁNEK, P.; GRMELA, L.
Rok RIV
2011
Vydáno
11. 9. 2011
Nakladatel
VDI Verlag
Místo
Düsseldorf
ISSN
0083-5560
Periodikum
VDI Berichte
Ročník
2156
Číslo
Stát
Spolková republika Německo
Strany od
291
Strany do
296
Strany počet
6
BibTex
@article{BUT73230, author="Pavel {Škarvada} and Pavel {Tománek} and Lubomír {Grmela}", title="Influence of laser cutting on p-n junction behavior of solar cell", journal="VDI Berichte", year="2011", volume="2156", number="2156", pages="291--296", issn="0083-5560" }