Detail publikace

Influence of laser cutting on p-n junction behavior of solar cell

ŠKARVADA, P. TOMÁNEK, P. GRMELA, L.

Originální název

Influence of laser cutting on p-n junction behavior of solar cell

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

We present the results of far-field nanoscopic investigation on the sub-micrometer localization and characterization of defects in optoelectronic devices (e.g. monocrystalline silicon solar cell structure) due to the material processing. Solar cells are generally prepared from Si-ingots sawed into thin round wafers by metallic wire. Hence, first defects appear on the sites of metallic precipitates, which reduce quantum efficiency of cells. Second type of defects then originates from further fitting of the round wafer into square cells. The latter can be dimensioning by mechanical sawing or breaking, laser opening or water jet stream cutting. Laser opening, as one of new processing techniques which could diminish the losses in the cells, is a promising tool but not yet well developed. Therefore this paper brings first results of preliminary study concerning the influence of laser cutting on the behavior of semiconductor p-n junction.

Klíčová slova

pn junction, laser cutting, solar cell, efficiency

Autoři

ŠKARVADA, P.; TOMÁNEK, P.; GRMELA, L.

Rok RIV

2011

Vydáno

11. 9. 2011

Nakladatel

VDI Verlag

Místo

Düsseldorf

ISSN

0083-5560

Periodikum

VDI Berichte

Ročník

2156

Číslo

2156

Stát

Spolková republika Německo

Strany od

291

Strany do

296

Strany počet

6

BibTex

@article{BUT73230,
  author="Pavel {Škarvada} and Pavel {Tománek} and Lubomír {Grmela}",
  title="Influence of laser cutting on p-n junction behavior of solar cell",
  journal="VDI Berichte",
  year="2011",
  volume="2156",
  number="2156",
  pages="291--296",
  issn="0083-5560"
}