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TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L., KAWATA, S.
Originální název
Near-field optical imaging of carrier dynamics in silicon with superresolution
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characteristic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active.
Klíčová slova
near-field optics, optical imaging, superresolution, semiconductor, silicon, lifetime, carrier dynamics
Autoři
Rok RIV
2003
Vydáno
2. 3. 2003
Nakladatel
Institute for Physics of microstructures RAS
Místo
Nizhniy Novgorod, Russia
Strany od
63
Strany do
65
Strany počet
3
BibTex
@inproceedings{BUT7380, author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}", title="Near-field optical imaging of carrier dynamics in silicon with superresolution", booktitle="Scanning Probe Microscopy - 2003", year="2003", pages="63--65", publisher="Institute for Physics of microstructures RAS", address="Nizhniy Novgorod, Russia" }