Detail publikace

Using of AFM for investigation of high-resistance aluminum nitride films

SAFARALIEV, G. KARDASHOVA, G. SOBOLA, D. MAGAMEDOVA, E.

Originální název

Using of AFM for investigation of high-resistance aluminum nitride films

Anglický název

Výzkum vysoce-odolných AlN vrstev pomocí AFM

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

ruština

Originální abstrakt

This paper describes the method and methodics for the study of high-resistans aluminum nitride film by atomic force microscopy. The main features of these measurements are shown.

Anglický abstrakt

This paper describes the method and methodics for the study of high-resistans aluminum nitride film by atomic force microscopy. The main features of these measurements are shown.

Klíčová slova

noncontact atomic force microscopy, cantilever, scanner, resistance, thin film

Klíčová slova v angličtině

noncontact atomic force microscopy, cantilever, scanner, resistance, thin film

Autoři

SAFARALIEV, G.; KARDASHOVA, G.; SOBOLA, D.; MAGAMEDOVA, E.

Vydáno

26. 11. 2010

Nakladatel

Energoatomizdat

Místo

Moscow

ISBN

978-5-283-00867-7

Kniha

Fundamental problems of Radioengineering and Device Construction

Strany od

219

Strany do

221

Strany počet

3

BibTex

@inproceedings{BUT76207,
  author="Gadjimet {Safaraliev} and Gulnara {Kardashova} and Dinara {Sobola} and Egana {Magamedova}",
  title="Using of AFM for investigation of high-resistance aluminum nitride films",
  booktitle="Fundamental problems of Radioengineering and Device Construction",
  year="2010",
  number="0",
  pages="219--221",
  publisher="Energoatomizdat",
  address="Moscow",
  isbn="978-5-283-00867-7"
}