Detail publikace

Technical features of creation new synthesis technologies of nano-, micro- and monocrystalline SiC film at 1000 oC

BILALOV, B. SAFARALIEV, G. KARDASHOVA, G. SOBOLA, D. EUBOV, S.

Originální název

Technical features of creation new synthesis technologies of nano-, micro- and monocrystalline SiC film at 1000 oC

Anglický název

Technické detaily tvorny nových technologií syntézy nano-, mikro- a monokrystalických vrstev SiC při 1000 oC

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

ruština

Originální abstrakt

This study describes the formation problems of nano-, micro- and monocrystalline SiC films. The influence of main parameters of magnetron sputtering is investigated.

Anglický abstrakt

This study describes the formation problems of nano-, micro- and monocrystalline SiC films. The influence of main parameters of magnetron sputtering is investigated.

Klíčová slova

thin films, pressure, temperature, discharge current, deposition

Klíčová slova v angličtině

thin films, pressure, temperature, discharge current, deposition

Autoři

BILALOV, B.; SAFARALIEV, G.; KARDASHOVA, G.; SOBOLA, D.; EUBOV, S.

Vydáno

23. 3. 2011

Nakladatel

Dagestan State University

Místo

Machachkala

Strany od

116

Strany do

118

Strany počet

2

URL

http://www.ulsu.ru

BibTex

@inproceedings{BUT76534,
  author="Bilal {Bilalov} and Gadjimet {Safaraliev} and Gulnara {Kardashova} and Dinara {Sobola} and Samur {Eubov}",
  title="Technical features of creation new synthesis technologies of nano-, micro- and monocrystalline SiC film at 1000 oC",
  booktitle="International conference INNOVATIKA 2011",
  year="2011",
  number="1",
  pages="116--118",
  publisher="Dagestan State University",
  address="Machachkala",
  url="http://www.ulsu.ru"
}