Local optical imaging of electronic characteristics in semiconductors

článek ve sborníku ve WoS nebo Scopus

angličtina

The continuous trend towards miniaturization of devices brings a new challenge for semiconductor studies: the demand for local rather than average material characterization. We report on optical imaging with superresolution in two different cases, which show the possibility of the Scanning Near-field Optical Microscopy (SNOM): dynamics of excess carriers in silicon and optically induced photocurrent in semiconductor structure The images locate defects, reveal variations, and also can map the regions in which a recombination process is active. Quantitative mapping of the excess carrier lifetime at sub-wavelength resolution better than 250 nm is now possible. Such measurements will give new insights into carrier transport and recombination processes in all types of semiconductors. On the other side, the comparative study of spatially resolved near-field photocurrent (NPC) spectra for high power laser diode arrays with double quantum well before and after degradation due to the aging process is presented. Near-field optical microscope operating in the illumination mode is employed and subwavelength spatial resolution of the PC spectra is established. The nondestructive quality of this method is a particularly attractive for in-situ analysis of laser structures.

semiconductor, nanostructure, measurement, local characteristics

TOMÁNEK, P., BENEŠOVÁ, M., OTEVŘELOVÁ, D., GRMELA, L., DOBIS, P.

2003

18. 8. 2003

Brno

80-239-1005-1

Noise and fluctuation ICNF 2003

445

448

4