Detail publikace

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

BENEŠOVÁ, M., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Originální název

Time-resolved contrast in near-field scanning optical microscopy of semiconductors

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.

Klíčová slova

near-field optical microscopy, semiconductor, local measurement, contrast, evaluation

Autoři

BENEŠOVÁ, M., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Rok RIV

2003

Vydáno

15. 12. 2003

Nakladatel

Vysoké učení technické v Brně, Fakulta strojního inženýrství

Místo

Brno

ISBN

80-214-2527-X

Kniha

Proceedings of International conference Nano´03

Strany od

201

Strany do

205

Strany počet

5

BibTex

@inproceedings{BUT8963,
  author="Markéta {Benešová} and Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová}",
  title="Time-resolved contrast in near-field scanning optical microscopy of semiconductors",
  booktitle="Proceedings of International conference Nano´03",
  year="2003",
  pages="5",
  publisher="Vysoké učení technické v Brně, Fakulta strojního inženýrství",
  address="Brno",
  isbn="80-214-2527-X"
}