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AYTEN, U. SAGBAS, M. HERENCSÁR, N. KOTON, J.
Originální název
Novel Floating General Element Simulators Using CBTA
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using SPICE simulation for 0.25 um, level 7, TSMC CMOS technology parameters.
Klíčová slova
Frequency dependent negative resistor (FDNR), floating inductor, capacitance multiplier, floating element simulator circuit, current backward transconductance amplifier (CBTA), active networks
Autoři
AYTEN, U.; SAGBAS, M.; HERENCSÁR, N.; KOTON, J.
Rok RIV
2012
Vydáno
2. 4. 2012
ISSN
1210-2512
Periodikum
Radioengineering
Ročník
21
Číslo
1
Stát
Česká republika
Strany od
11
Strany do
19
Strany počet
9
BibTex
@article{BUT91544, author="Umut E. {Ayten} and Mehmet {Sagbas} and Norbert {Herencsár} and Jaroslav {Koton}", title="Novel Floating General Element Simulators Using CBTA", journal="Radioengineering", year="2012", volume="21", number="1", pages="11--19", issn="1210-2512" }