Detail publikace

High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design

ARSLAN, E. METIN, B. HERENCSÁR, N. KOTON, J. MORGÜL, A. CICEKOGLU, O.

Originální název

High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

In this paper, a new, differential pair based, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has high voltage swings on ports X and Y and very low equivalent impedance on port X due to super source follower configuration. It also has high voltage swings (close to supply voltages) on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. Using HSpice, it is shown that the simulation results of the proposed CCI and also of the presented inductance simulators are in very good agreement with the expected ones.

Klíčová slova

CCI, first generation current conveyor, grounded inductance simulator

Autoři

ARSLAN, E.; METIN, B.; HERENCSÁR, N.; KOTON, J.; MORGÜL, A.; CICEKOGLU, O.

Rok RIV

2012

Vydáno

30. 8. 2012

Nakladatel

Stefan cel Mare University of Suceava, Romania

ISSN

1582-7445

Periodikum

ADV ELECTR COMPUT EN

Ročník

12

Číslo

3

Stát

Rumunsko

Strany od

21

Strany do

26

Strany počet

6

BibTex

@article{BUT93499,
  author="Emre {Arslan} and Bilgin {Metin} and Norbert {Herencsár} and Jaroslav {Koton} and Avni {Morgül} and Oguzhan {Cicekoglu}",
  title="High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design",
  journal="ADV ELECTR COMPUT EN",
  year="2012",
  volume="12",
  number="3",
  pages="21--26",
  doi="10.4316/AECE.2012.03003",
  issn="1582-7445"
}