Detail publikace

Optoelectronic diagnostics of defects in solar cell structures

TOMÁNEK, P. ŠKARVADA, P. GRMELA, L. DALLAEVA, D.

Originální název

Optoelectronic diagnostics of defects in solar cell structures

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Scanning proximal microscopy is successfully used for micro- or nanoscale diagnostics of defects in monocrystalline silicon solar cells. The elaborated method combines three different measurements: electric noise measurement, local topography and near-field optical beam induced current. To prove the feasibility of this method, we have chosen one bulk and one edge defect within the sample, which emitted light under low reverse-biased voltage.

Klíčová slova

monocrystalline silicon, solar cell, defect, diagnsitcis, local measurement

Autoři

TOMÁNEK, P.; ŠKARVADA, P.; GRMELA, L.; DALLAEVA, D.

Rok RIV

2012

Vydáno

16. 10. 2012

Nakladatel

Institute of plasma Physics

Místo

Prague

ISBN

978-80-87026-02-1

Kniha

Optica and Measurement 2012

Strany od

137

Strany do

140

Strany počet

4

BibTex

@inproceedings{BUT94572,
  author="Pavel {Tománek} and Pavel {Škarvada} and Lubomír {Grmela} and Dinara {Sobola}",
  title="Optoelectronic diagnostics of defects in solar cell structures",
  booktitle="Optica and Measurement 2012",
  year="2012",
  pages="137--140",
  publisher="Institute of plasma Physics",
  address="Prague",
  isbn="978-80-87026-02-1"
}