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TOMÁNEK, P. ŠKARVADA, P. GRMELA, L. DALLAEVA, D.
Originální název
Optoelectronic diagnostics of defects in solar cell structures
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Scanning proximal microscopy is successfully used for micro- or nanoscale diagnostics of defects in monocrystalline silicon solar cells. The elaborated method combines three different measurements: electric noise measurement, local topography and near-field optical beam induced current. To prove the feasibility of this method, we have chosen one bulk and one edge defect within the sample, which emitted light under low reverse-biased voltage.
Klíčová slova
monocrystalline silicon, solar cell, defect, diagnsitcis, local measurement
Autoři
TOMÁNEK, P.; ŠKARVADA, P.; GRMELA, L.; DALLAEVA, D.
Rok RIV
2012
Vydáno
16. 10. 2012
Nakladatel
Institute of plasma Physics
Místo
Prague
ISBN
978-80-87026-02-1
Kniha
Optica and Measurement 2012
Strany od
137
Strany do
140
Strany počet
4
BibTex
@inproceedings{BUT94572, author="Pavel {Tománek} and Pavel {Škarvada} and Lubomír {Grmela} and Dinara {Sobola}", title="Optoelectronic diagnostics of defects in solar cell structures", booktitle="Optica and Measurement 2012", year="2012", pages="137--140", publisher="Institute of plasma Physics", address="Prague", isbn="978-80-87026-02-1" }