Detail publikace

Local investigation of defects in monocrystalline silicon solar cells

TOMÁNEK, P. ŠKARVADA, P. GRMELA, L. MACKŮ, R. SMITH, S.

Originální název

Local investigation of defects in monocrystalline silicon solar cells

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

We present results of microscale localization and characterization of defects in monocrystalline silicon solar cells using LBIC and Scanning near-field optical microscopy (SNOM). Although etched silicon is still most effective material for solar cells, some problems with their use in solar plant installation persist due to the defects.

Klíčová slova

monocrystalline silicon, solar cell, defect, LBIC, SNOM

Autoři

TOMÁNEK, P.; ŠKARVADA, P.; GRMELA, L.; MACKŮ, R.; SMITH, S.

Rok RIV

2012

Vydáno

6. 7. 2012

Nakladatel

IEEE USA

Místo

Seattle, USA

ISSN

0160-8371

Periodikum

Conference Record of the IEEE Photovoltaic Specialists Conference

Ročník

2012

Číslo

1

Stát

Spojené státy americké

Strany od

1686

Strany do

1690

Strany počet

5

BibTex

@article{BUT95657,
  author="Pavel {Tománek} and Pavel {Škarvada} and Lubomír {Grmela} and Robert {Macků} and Steve J. {Smith}",
  title="Local investigation of defects in monocrystalline silicon solar cells",
  journal="Conference Record of the IEEE Photovoltaic Specialists Conference",
  year="2012",
  volume="2012",
  number="1",
  pages="1686--1690",
  doi="10.1109/PVSC.2011.6186279",
  issn="0160-8371"
}